小型半导体器件中电子输运模拟的主方程方法

Massimo V. Fischetti
{"title":"小型半导体器件中电子输运模拟的主方程方法","authors":"Massimo V. Fischetti","doi":"10.1109/IWCE.1998.742715","DOIUrl":null,"url":null,"abstract":"The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"51 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A master equation approach to the simulation of electron transport in small semiconductor devices\",\"authors\":\"Massimo V. Fischetti\",\"doi\":\"10.1109/IWCE.1998.742715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"51 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文的目的是概述输运方程的“形式化”推导,强调所需的关键近似,并将该方法扩展到更实际的能带结构。给出了一个电子在镍二极管中的传递的例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A master equation approach to the simulation of electron transport in small semiconductor devices
The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信