{"title":"1-MΩ量子霍尔阵列电阻标准的研制","authors":"T. Oe, S. Gorwadkar, T. Itatani, N. Kaneko","doi":"10.1109/CPEM.2016.7540717","DOIUrl":null,"url":null,"abstract":"We have started to develop 1-MΩ quantum Hall array standards with GaAs/AlGaAs substrates. This 1-MΩ QHR array device consists of 88 Hall bars, and the nominal value is 1 MΩ × (1-0.0342 μΩ/Ω). The ratio for this nominal, 10150/131, was derived by the continued fraction expansion method. It adopts the triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value. We expect that this device will allow us to improve the high-resistance standard system and to convert the small current from electron pumps to easily measurable voltage without lowering precision.","PeriodicalId":415488,"journal":{"name":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Development of 1-MΩ quantum Hall array resistance standards\",\"authors\":\"T. Oe, S. Gorwadkar, T. Itatani, N. Kaneko\",\"doi\":\"10.1109/CPEM.2016.7540717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have started to develop 1-MΩ quantum Hall array standards with GaAs/AlGaAs substrates. This 1-MΩ QHR array device consists of 88 Hall bars, and the nominal value is 1 MΩ × (1-0.0342 μΩ/Ω). The ratio for this nominal, 10150/131, was derived by the continued fraction expansion method. It adopts the triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value. We expect that this device will allow us to improve the high-resistance standard system and to convert the small current from electron pumps to easily measurable voltage without lowering precision.\",\"PeriodicalId\":415488,\"journal\":{\"name\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.2016.7540717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2016.7540717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of 1-MΩ quantum Hall array resistance standards
We have started to develop 1-MΩ quantum Hall array standards with GaAs/AlGaAs substrates. This 1-MΩ QHR array device consists of 88 Hall bars, and the nominal value is 1 MΩ × (1-0.0342 μΩ/Ω). The ratio for this nominal, 10150/131, was derived by the continued fraction expansion method. It adopts the triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value. We expect that this device will allow us to improve the high-resistance standard system and to convert the small current from electron pumps to easily measurable voltage without lowering precision.
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