用于电路仿真的功率双极晶体管解析模型

5th IEEE Workshop on Computers in Power Electronics Pub Date : 1996-08-11 DOI:10.1109/CIPE.1996.612348

B. Fatemizadeh, P. Lauritzen

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引用次数: 0

摘要

本文提出了一种新的双极结晶体管(BJT)建模方法，该方法采用解析法，为大多数电力电子应用提供了足够的精度和快速的仿真时间。这个新的分析模型包括了所有重要的物理效应:基极和发射极的复合;高注入;集电极电导率调制;准饱和;载流子速度饱和度;位移电流。

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An analytical model of power bipolar transistor for circuit simulation

This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current.

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5th IEEE Workshop on Computers in Power Electronics

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