P-i-N二极管的存储电荷控制:仿真方法

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004033

H. E. Aldrete-Vidrio, J. Santana, J. L. del Valle

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引用次数: 2

摘要

本文比较了不同功率整流二极管结构在相同工作条件下的正向压降、击穿电压、反向漏电流和反向恢复时间等重要电气参数。这类结构包括常规、常规带有阳极镶嵌触点和改进镶嵌触点的P-i-N二极管结构。基于标准工艺参数，利用先进的二维(2-D)器件、电路和系统模拟器ISE-TCAD进行了工艺、电气和混合模式仿真，并与分析型掺杂谱模拟进行了比较，表明该结构是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stored charge control of P-i-N diodes: a simulation approach

This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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