T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura
{"title":"用于超高效率HPA的双栅极场效应管","authors":"T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura","doi":"10.1109/DRC.1995.496238","DOIUrl":null,"url":null,"abstract":"Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Dual-gate FETs for ultra-high efficiency HPA\",\"authors\":\"T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura\",\"doi\":\"10.1109/DRC.1995.496238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496238\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.
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