改善铌酸锂SH0谐振腔抗共振品质因子的边型优化

Silvan Stettler, L. Villanueva
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引用次数: 0

摘要

薄膜铌酸锂(LNO)已被确定为实现高机电耦合和低损耗压电谐振器滤波应用的有前途的材料平台。本文报道了谐振频率为1.1 GHz的基剪水平(SHO)模谐振器的设计和制造。由于谐振腔侧壁离子束蚀刻(IBE)产生的不期望的再沉积碎片,初始器件显示高损耗,导致抗共振质量因子低。提出了提高谐振腔侧壁质量和减小谐振腔侧壁损耗的方法。通过这些改进,可以实现高机电耦合$(k_{eff}^{2}$ = 28%)和阻抗比大于104的SHO谐振器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators
Thin-film lithium niobate (LNO) has been identified as a promising material platform for enabling high electromechanical coupling and low-loss piezoelectric resonators for filtering applications. In this work, the design and fabrication of fundamental shear horizontal (SHO) mode resonators with a resonance frequency of 1.1 GHz are reported. Initial devices show high losses leading to low quality factor at anti-resonance due to undesired redeposition debris originating from Ion Beam Etching (IBE) of the resonator sidewalls. Methods to improve the quality of the resonator sidewalls and minimize those losses are presented. With those improvements, SHO resonators with high electromechanical coupling $(k_{eff}^{2}$ = 28%) and impedance ratios larger than 104 could be achieved.
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