低温AlN中间层对Si衬底上AlGaN/GaN异质结构电性能的影响

2016 IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference (IMCEC) Pub Date : 2016-10-01 DOI:10.1109/IMCEC.2016.7867422

Zhiyuan He, Shaoqing Liu, J. Hu, Huawei Xu, Qingli Huang, Qunxing Liu

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引用次数: 1

摘要

本文研究了低温AlN (LT-AlN)中间层在Si衬底上生长的AlGaN/GaN异质结构的电学性能。采用霍尔效应测量法测试了不同LT-AlN厚度样品中AlGaN/GaN异质结构的电学性能。结果表明，缓冲层中低温AlN夹层的厚度对异质结构通道中二维电子气(2DEG)的电学性能有明显影响。具有15 nm LT-AlN中间层的样品达到了4090 cm2/Vs的最大电子迁移率。结合XRD和AFM测试发现，位错密度、表面粗糙度和应力条件决定了2DEG的电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of the low-temperature AlN interlayers on the electrical properties of AlGaN/GaN heterostructure on Si substrate

In this work, the electrical properties of AlGaN/GaN heterostructure grown on Si substrate with low-temperature AlN (LT-AlN) interlayers were investigated. Hall effect measurement was used to test the electrical properties of AlGaN/GaN heterostructure in all samples with different LT-AlN thickness. It is showed that the thickness of low-temperature AlN interlayers in the bufferlayer obviously effect the electrical properties of two-dimensional electron gas (2DEG) in the heterostructure channel. The sample with 15 nm LT-AlN interlayers reached the maximum electron mobility of 4090 cm2/Vs. Combined with XRD and AFM measurements, it is found that the dislocation density, surface roughness and stress conditions determined the electrical properties of 2DEG.

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2016 IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference (IMCEC)

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