一种适用于宽温度范围的SiC mosfet紧凑器件模型

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI:10.1109/WiPDAAsia49671.2020.9360251

Kyohei Shimozato, S. Bian, Takashi Sato

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引用次数: 2

摘要

提出了一种适用于宽温度范围的SiC mosfet结构紧凑的模型。根据器件物理特性，确定了五个模型参数与温度关系的模型方程。与现有模型不同的是，由于界面阱的放电，该模型中的载流子迁移率随温度升高而增加。所提出的模型准确地表达了商用SiC mosfet在300°C以上测量的I-V特性。

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A Compact Device Model for SiC MOSFETs Valid for Wide-Temperature Range

A compact model for SiC MOSFETs valid for wide temperature range is proposed. The model equations that represent temperature dependence of five model parameters are determined according to device physics. Unlike existing models, carrier mobility increases with temperature in the proposed model due to the discharge of the interface trap. The proposed model accurately expresses the measured I-V characteristics of commercial SiC MOSFETs over 300° C.

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来源期刊

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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