一个375纳秒的主存储系统，使用7mil核

AFIPS '65 (Fall, part I) Pub Date : 1965-11-30 DOI:10.1145/1463891.1464002

G. Werner, R. Whalen

{"title":"一个375纳秒的主存储系统，使用7mil核","authors":"G. Werner, R. Whalen","doi":"10.1145/1463891.1464002","DOIUrl":null,"url":null,"abstract":"It has been postulated that ferrite and thin film memories should have approximately the same ultimate speed limits. For this to be true in the case of conventional toroids, it is clear that the storage element must be made smaller and the storage array made more compact without increasing noise.","PeriodicalId":143723,"journal":{"name":"AFIPS '65 (Fall, part I)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1965-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 375-nanosecond main memory system utilizing 7-mil cores\",\"authors\":\"G. Werner, R. Whalen\",\"doi\":\"10.1145/1463891.1464002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It has been postulated that ferrite and thin film memories should have approximately the same ultimate speed limits. For this to be true in the case of conventional toroids, it is clear that the storage element must be made smaller and the storage array made more compact without increasing noise.\",\"PeriodicalId\":143723,\"journal\":{\"name\":\"AFIPS '65 (Fall, part I)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1965-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AFIPS '65 (Fall, part I)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1463891.1464002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AFIPS '65 (Fall, part I)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1463891.1464002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

据推测，铁氧体存储器和薄膜存储器具有大致相同的极限速度。对于传统的环面来说，要做到这一点，很明显，存储元件必须做得更小，存储阵列必须做得更紧凑，而不增加噪音。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 375-nanosecond main memory system utilizing 7-mil cores

It has been postulated that ferrite and thin film memories should have approximately the same ultimate speed limits. For this to be true in the case of conventional toroids, it is clear that the storage element must be made smaller and the storage array made more compact without increasing noise.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

AFIPS '65 (Fall, part I)

自引率

0.00%

发文量