盖革模式硅基锗单光子雪崩二极管探测器

J. Kirdoda, D. Dumas, R. Millar, M. Mirza, D. Paul, K. Kuzmenko, P. Vines, Z. Greener, G. Buller
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引用次数: 2

摘要

基于锗硅材料体系的高效单光子雪崩探测器(SPADs)是一种新兴的短波红外高灵敏度光学探测技术。在1310nm下,在125K的工作温度下,单光子探测效率达到38%。这是通过一种新的平面几何结构实现的,与名义上相同条件下运行的基于InGaAs/InP的spad相比,它的NEPs为3×10−16 WHz−1/2,并且减少了后脉冲。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors
High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an operating temperature of 125K. This was achieved using a novel planar geometry which allowed us to achieve an NEPs of 3×10−16 WHz−1/2 and reduced afterpulsing when compared to InGaAs/InP based SPADs operated in nominally identical conditions.
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