用于模拟Si/SiGe mosfet的翘曲带中有效空穴传输模型

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742719

J. Watling, A. Asenov, J. Barker

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引用次数: 4

摘要

本文建立了应变和松弛Si/sub - 1-x/Ge/sub -x/的价带解析几何模型，该模型与6波段的k/spl中点/p分析结果吻合较好。该几何模型允许我们定义扭曲价带结构的有效质量张量。该模型也可以应用于III-V型半导体的研究，并可以帮助解释这些波段的回旋共振实验。在此模型的基础上，利用轨迹动力学的有效计算，开发了弯曲三波段蒙特卡罗仿真。计算的输运特性与现有实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

An analytical geometric model for the valence band in strained and relaxed Si/sub 1-x/Ge/sub x/ is presented, which shows good agreement with a 6-band k/spl middot/p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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