在深亚微米内置电流传感器中采用I/sub DDQ/输出放大器的可行性

Digest of Papers 1996 IEEE International Workshop on IDDQ Testing Pub Date : 1996-10-24 DOI:10.1109/IDDQ.1996.557822

S. Athan, D. Landis

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引用次数: 1

摘要

评估了在深亚微米CMOS集成电路中采用I/sub DDQ/ output MOSFET放大器的可行性。对CUT性能进行评估，以确定在深亚微米状态下由于工艺缩放而产生的影响。比较了面积开销的BICS设计与不使用输出放大器。

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Feasibility of employing an I/sub DDQ/ output amplifier in deep submicron built-in current sensors

The feasibility of employing an I/sub DDQ/ output MOSFET amplifier in deep submicron CMOS ICs is evaluated. CUT performance is evaluated to determine the impact due to process scaling in the deep submicron regime. Comparisons of area overhead are made between BICS designs with and without the use of an output amplifier.

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Digest of Papers 1996 IEEE International Workshop on IDDQ Testing

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