{"title":"基于原子力显微镜和光刻技术制备PCSS","authors":"Qinggang Liu, Kai Zhang, Jindong Xin, Xiaotang Hu","doi":"10.1109/SOPO.2010.5504010","DOIUrl":null,"url":null,"abstract":"Several ten nanometers width TiOx wires was fabricated on the surface of 3~5nm thick Ti lines which covers GaAs substrate. TiOx wires are fabricated by atomic force microscope (AFM), and the Ti lines are fabricated by photolithograph method. Oxide is used as insulator/energy barrier between the electrodes to substitute the air gap of traditional type photoconductive semiconductive switches (PCSS). The electrodes and substrate's materials are Ti-Au and LT-GaAs respectively. The simulation result indicated that the voltage or current output characteristic of the PCSS is different from the traditional switch. In this paper, this phenomenon is analyzed and the method to avoid such kind of non-linearity output is discussed.","PeriodicalId":155352,"journal":{"name":"2010 Symposium on Photonics and Optoelectronics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of PCSS Based on AFM and Photolithograph\",\"authors\":\"Qinggang Liu, Kai Zhang, Jindong Xin, Xiaotang Hu\",\"doi\":\"10.1109/SOPO.2010.5504010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several ten nanometers width TiOx wires was fabricated on the surface of 3~5nm thick Ti lines which covers GaAs substrate. TiOx wires are fabricated by atomic force microscope (AFM), and the Ti lines are fabricated by photolithograph method. Oxide is used as insulator/energy barrier between the electrodes to substitute the air gap of traditional type photoconductive semiconductive switches (PCSS). The electrodes and substrate's materials are Ti-Au and LT-GaAs respectively. The simulation result indicated that the voltage or current output characteristic of the PCSS is different from the traditional switch. In this paper, this phenomenon is analyzed and the method to avoid such kind of non-linearity output is discussed.\",\"PeriodicalId\":155352,\"journal\":{\"name\":\"2010 Symposium on Photonics and Optoelectronics\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2010.5504010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2010.5504010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of PCSS Based on AFM and Photolithograph
Several ten nanometers width TiOx wires was fabricated on the surface of 3~5nm thick Ti lines which covers GaAs substrate. TiOx wires are fabricated by atomic force microscope (AFM), and the Ti lines are fabricated by photolithograph method. Oxide is used as insulator/energy barrier between the electrodes to substitute the air gap of traditional type photoconductive semiconductive switches (PCSS). The electrodes and substrate's materials are Ti-Au and LT-GaAs respectively. The simulation result indicated that the voltage or current output characteristic of the PCSS is different from the traditional switch. In this paper, this phenomenon is analyzed and the method to avoid such kind of non-linearity output is discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
