Fangyuan Ren, Dezhi Xing, Shuai Tang, Jun Huang, Yao Wang
{"title":"用于马赫-曾德调制器的0.13 μm SiGe BICMOS技术50gb /s线性驱动器","authors":"Fangyuan Ren, Dezhi Xing, Shuai Tang, Jun Huang, Yao Wang","doi":"10.1109/ICCS51219.2020.9336615","DOIUrl":null,"url":null,"abstract":"In this paper, a linear driver for travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) in 0.13 μm SiGe BICMOS technology is presented. The driver is implemented by a six-stage distributed differential amplifier. To drive a specified MZM with 33 Ω impedance, the driver delivers a differential output signal of 3 Vpp, exhibits a small-signal gain of 13 dB and 3-dB bandwidth of over 40 GHz. The driver works from a 6 V supply with a power consumption equal to 720 mW. Post layout simulation results show good eye diagrams of 50 Gbps NRZ and 50 GBps PAM-4 (100 Gbps) signals. The physical layout occupies an area of 1.82 × 0.71 mm2.","PeriodicalId":193552,"journal":{"name":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 50 Gb/s Linear Driver in 0.13 μm SiGe BICMOS Technology for Mach-Zehnder Modulators\",\"authors\":\"Fangyuan Ren, Dezhi Xing, Shuai Tang, Jun Huang, Yao Wang\",\"doi\":\"10.1109/ICCS51219.2020.9336615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a linear driver for travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) in 0.13 μm SiGe BICMOS technology is presented. The driver is implemented by a six-stage distributed differential amplifier. To drive a specified MZM with 33 Ω impedance, the driver delivers a differential output signal of 3 Vpp, exhibits a small-signal gain of 13 dB and 3-dB bandwidth of over 40 GHz. The driver works from a 6 V supply with a power consumption equal to 720 mW. Post layout simulation results show good eye diagrams of 50 Gbps NRZ and 50 GBps PAM-4 (100 Gbps) signals. The physical layout occupies an area of 1.82 × 0.71 mm2.\",\"PeriodicalId\":193552,\"journal\":{\"name\":\"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCS51219.2020.9336615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS51219.2020.9336615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 50 Gb/s Linear Driver in 0.13 μm SiGe BICMOS Technology for Mach-Zehnder Modulators
In this paper, a linear driver for travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) in 0.13 μm SiGe BICMOS technology is presented. The driver is implemented by a six-stage distributed differential amplifier. To drive a specified MZM with 33 Ω impedance, the driver delivers a differential output signal of 3 Vpp, exhibits a small-signal gain of 13 dB and 3-dB bandwidth of over 40 GHz. The driver works from a 6 V supply with a power consumption equal to 720 mW. Post layout simulation results show good eye diagrams of 50 Gbps NRZ and 50 GBps PAM-4 (100 Gbps) signals. The physical layout occupies an area of 1.82 × 0.71 mm2.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
