超高频RFID应用的电压乘法器拓扑比较

Diego Golpe Molinos, H. Solar, A. Beriain, R. Berenguer
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引用次数: 0

摘要

由于可以从射频场获得的功率有限,UHF RFID系统需要能够在几十μ W的情况下工作。因此,高效的电压倍增器是获得能够远距离操作并具有先进功能的标签的关键因素。这项工作的目标是获得一种拓扑结构,能够以最小的射频输入功率提供所需的工作电压。最高的灵敏度和效率将提供最长的范围,这是超高频RFID应用的关键参数。为了获得最大的灵敏度和功率转换效率(PCE),对晶体管和二极管的尺寸和级数等因素进行了分析。在本文中,开发和分析了四个电压倍增器,遵循相同的方法,使用180µm工艺。在模拟输入功率范围为- 15dBm至- 8dbm的情况下,肖特基乘子的灵敏度高达- 12dbm, pce高达16%,负载为7µa。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Voltage Multiplier Topologies Comparison for UHF RFID Applications
Due to the limited power that can be obtained from the RF field, UHF RFID systems need to be able to operate with few dozens of µW. Therefore, an efficient voltage multiplier is a key element to obtain tags able to operate at long ranges and with advanced functionalities. The objective of this work, is obtaining a topology able to provide the required operative voltage with the minimum RF input power. The highest possible sensitivity and efficiency will provide the longest range, which is a critical parameter in UHF RFID applications. Factors such as transistor and diode size and number of stages have been analyzed in order to obtain the maximum sensitivity and power conversion efficiency (PCE). In this paper, four voltage multipliers are developed and analysed, following the same methodology using a 180µm process. Sensitivities as high as -12dBm and PCEs up to 16% with a load of 7µA are obtained in the Schottky multiplier, during simulation of an input power range from - 15dBm to -8dBm.
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