在绝缘体上硅纳米光子波导上集成的高速锗脚光电二极管

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853887

C. Alonso‐Ramos, F. Amar, G. Aubin, C. Baudot, D. Benedikovic, F. Boeuf, E. Cassan, P. Crozat, J. Fédéli, J. Hartmann, C. Kopp, X. Roux, D. Marris-Morini, B. Szelag, L. Virot, L. Vivien

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引用次数: 1

摘要

报道了在低反向电压下工作的具有高响应性、快速响应和低暗电流水平的异质结构硅-锗-硅光电探测器。实验结果表明，传统数据速率为10、20和25 Gbps时，误码率为10 - 9，光功率灵敏度为- 13.9、- 12.7和- 11.3 dBm。

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High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides

Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10−9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of −13.9, −12.7, and −11.3 dBm.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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