采用噪声消除技术的0.13µm CMOS 12mW 5GHz宽带低噪声放大器

2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals Pub Date : 2011-09-26 DOI:10.1109/IMWS2.2011.6027203

H. Kim, Jiyoung Tak, Jinju Lee, Jihye Shin, Jung-Won Han, Sung Min Park

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引用次数: 1

摘要

本文提出了一种基于噪声消除技术的宽带低噪声放大器(LNA)，工作频率为800MHz-5.7GHz，适用于低功耗多标准应用。LNA采用0.13µm CMOS技术实现，测量结果表明，在811MHz ~ 5.7GHz频率范围内，最大增益为11.7dB，带宽范围内噪声系数为2.58 ~ 5.11dB, 2.4GHz时输入参考三阶截距点(IIP3)为1.6dBm，单路1.2V电源功耗为12mW。芯片的总面积为0.7×0.9mm2。

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A 12mW 5GHz wideband low-noise amplifier in 0.13µm CMOS using noise cancellation

This paper presents a wideband low-noise amplifier (LNA) exploiting noise cancellation technique, which operates at 800MHz–5.7GHz for low-power multi-standard applications. Implemented in a 0.13µm CMOS technology, the measured results of the LNA demonstrate the maximum gain of 11.7dB in the frequency range of 811MHz∼5.7GHz, the noise figure of 2.58∼5.11dB within the bandwidth, the input-referred third order intercept point (IIP3) of 1.6dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×0.9mm2.

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2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals

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