p型finfet参数随晶圆位置变化的研究

2019 IEEE XXVIII International Scientific Conference Electronics (ET) Pub Date : 2019-09-01 DOI:10.1109/ET.2019.8878503

G. Angelov, M. Spasova, D. Nikolov, R. Rusev

{"title":"p型finfet参数随晶圆位置变化的研究","authors":"G. Angelov, M. Spasova, D. Nikolov, R. Rusev","doi":"10.1109/ET.2019.8878503","DOIUrl":null,"url":null,"abstract":"In this paper we study the variability of measured drain current, output characteristics and threshold voltage for 14-nm ${p}$-type FinFETs depending on their location on the silicon wafer-three positions on the wafer are considered. The results showed that the technology is steady with weak parameter variability depending on wafer position.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of p-type FinFETs’ Parameter Variability Depending on Wafer Location\",\"authors\":\"G. Angelov, M. Spasova, D. Nikolov, R. Rusev\",\"doi\":\"10.1109/ET.2019.8878503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we study the variability of measured drain current, output characteristics and threshold voltage for 14-nm ${p}$-type FinFETs depending on their location on the silicon wafer-three positions on the wafer are considered. The results showed that the technology is steady with weak parameter variability depending on wafer position.\",\"PeriodicalId\":306452,\"journal\":{\"name\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2019.8878503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们研究了14nm ${p}$型finfet的漏极电流、输出特性和阈值电压随其在硅片上位置的变化，其中考虑了硅片上的三个位置。结果表明，该工艺稳定，参数随晶圆位置的变化较小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Study of p-type FinFETs’ Parameter Variability Depending on Wafer Location

In this paper we study the variability of measured drain current, output characteristics and threshold voltage for 14-nm ${p}$-type FinFETs depending on their location on the silicon wafer-three positions on the wafer are considered. The results showed that the technology is steady with weak parameter variability depending on wafer position.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE XXVIII International Scientific Conference Electronics (ET)

自引率

0.00%

发文量