具有紧密串并联共振频率的薄膜体声谐振器质量因子Q的精确公式

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393393

Pei-Yen Chen, Y. Chin, Chi-Yun Chen, Chun-Li Hou

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引用次数: 2

摘要

本文提出了具有相近串联和并联谐振频率的薄膜体声谐振器(fbar)质量因子Q的改进公式精度。传统上，串联和并联谐振行为是独立处理的。当串联频率和并联频率接近到足以相互影响时，FBAR压电耦合系数仅为几个百分比。采用硅本体微加工技术制备了双端口结构的fbar。利用网络分析仪对FBAR传输线进行分析，探测其特性。利用双端口S参数测量数据，对传输线路的信号功率损耗进行建模，以表征fbar。

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Accurate Formula for Quality Factor Q of Thin Film Bulk Acoustic Resonators with Close Series and Parallel Resonance Frequencies

This paper presents improved formula accuracy for quality factor Q of thin film bulk acoustic resonators (FBARs) with close series and parallel resonance frequencies. Traditionally, the series and parallel resonance behaviors are treated independently. The FBAR piezoelectric coupling coefficient is only a few percentages with the series and parallel frequencies close enough to influence each other. The FBARs with two-port configuration are fabricated using silicon bulk micro-machining technology. Including the FBAR transmission lines are analyzed to probe their characteristics using a network analyzer. The signal power loss of the transmission lines is modeled to characterize the FBARs using two-port S parameter measurement data.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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