一种利用双端口矢量网络分析仪提取快速开关功率mosfet寄生电感的新表征技术

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988967

Tianjiao Liu, Runtao Ning, T.T.Y. Wong, Z. Shen

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引用次数: 12

摘要

本文讨论了一种基于双端口矢量网络分析仪s参数测量的精确表征离散型快速开关mosfet寄生电感的新技术。通过对TO-247封装的1200V SiC MOSFET和SO-8封装的30V硅沟槽MOSFET的案例研究，验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using two-port vector network analyzer

This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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