冲击电离诱导的尺度SiGe HBTs“混合模式”可靠性应力损伤机制研究

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269209

Chendong Zhu, Q. Liang, R. Al-Huq, J. Cressler, A. Joseph, J. Johansen, Tianbing Chen, G. Niu, G. Freeman, J. Rieh, D. Ahlgren

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引用次数: 19

摘要

介绍了一种鲁棒的、时变应力方法，用于研究高级SiGe HBTs的“混合模式”(同时高J/sub C/和高V/sub CB/)可靠性退化。我们提供了120 GHz SiGe HBTs的综合应力数据，并使用了专门设计的具有可变发射器到浅沟槽间距的测试结构，以阐明由此产生的损伤机制。我们还使用热载流子注入电流技术进行了校准的MEDICI模拟，以更好地了解损伤机制，并通过评估混合模应力对大规模缩放200 GHz SiGe hbt的影响来得出结论。

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An investigation of the damage mechanisms in impact ionization-induced "mixed-mode" reliability stressing of scaled SiGe HBTs

A robust, time-dependent stress methodology for investigating "mixed-mode" (simultaneous high J/sub C/ and high V/sub CB/) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.

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IEEE International Electron Devices Meeting 2003

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