Tomoaki Osumi, Ryosuke Hori, M. Nagao, H. Murata, Y. Gotoh
{"title":"超化学计量氮化铪涂层场发射阵列的电子发射特性","authors":"Tomoaki Osumi, Ryosuke Hori, M. Nagao, H. Murata, Y. Gotoh","doi":"10.1109/IVNC57695.2023.10189004","DOIUrl":null,"url":null,"abstract":"Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron Emission Characteristics of Field Emitter Arrays Coated with Over-Stoichiometric Hafnium Nitride\",\"authors\":\"Tomoaki Osumi, Ryosuke Hori, M. Nagao, H. Murata, Y. Gotoh\",\"doi\":\"10.1109/IVNC57695.2023.10189004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours\",\"PeriodicalId\":346266,\"journal\":{\"name\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC57695.2023.10189004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC57695.2023.10189004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron Emission Characteristics of Field Emitter Arrays Coated with Over-Stoichiometric Hafnium Nitride
Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours
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