水平电流双极晶体管(HCBT)的大信号特性的负载-拉力测量

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI:10.23919/MIPRO.2018.8400014

Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj

{"title":"水平电流双极晶体管(HCBT)的大信号特性的负载-拉力测量","authors":"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj","doi":"10.23919/MIPRO.2018.8400014","DOIUrl":null,"url":null,"abstract":"Load-pull and source-pull characterization of packaged Horizontal Current Bipolar Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull measurement setup is used to determine the optimal matching conditions at both input and output of the transistor, considering maximum output power and efficiency. Three classes of power amplifier (PA) operation are investigated, namely Class A, Class AB and Class B. Matching impedances and bias points for all classes of operation are optimized by employing the load-pull and source-pull contours for output power and collector efficiency. With the output power of more than 22 dBm and gain of 11 dB, HCBT shows a great potential for RF power amplifier design for modern wireless communication standards, such as Wi-Fi and 4G LTE.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements\",\"authors\":\"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj\",\"doi\":\"10.23919/MIPRO.2018.8400014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Load-pull and source-pull characterization of packaged Horizontal Current Bipolar Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull measurement setup is used to determine the optimal matching conditions at both input and output of the transistor, considering maximum output power and efficiency. Three classes of power amplifier (PA) operation are investigated, namely Class A, Class AB and Class B. Matching impedances and bias points for all classes of operation are optimized by employing the load-pull and source-pull contours for output power and collector efficiency. With the output power of more than 22 dBm and gain of 11 dB, HCBT shows a great potential for RF power amplifier design for modern wireless communication standards, such as Wi-Fi and 4G LTE.\",\"PeriodicalId\":431110,\"journal\":{\"name\":\"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIPRO.2018.8400014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIPRO.2018.8400014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在2.4 GHz下对封装的水平电流双极晶体管(HCBT)进行负载-拉和源-拉表征。考虑到最大输出功率和效率，使用完全校准的自动负载-拉力测量装置来确定晶体管输入和输出的最佳匹配条件。研究了A类、AB类和b类三种功率放大器的工作方式。通过采用负载-拉和源-拉轮廓来优化输出功率和集电极效率的匹配阻抗和偏置点。HCBT具有超过22 dBm的输出功率和11 dB的增益，在现代无线通信标准(如Wi-Fi和4G LTE)的射频功率放大器设计中显示出巨大的潜力。

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Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements

Load-pull and source-pull characterization of packaged Horizontal Current Bipolar Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull measurement setup is used to determine the optimal matching conditions at both input and output of the transistor, considering maximum output power and efficiency. Three classes of power amplifier (PA) operation are investigated, namely Class A, Class AB and Class B. Matching impedances and bias points for all classes of operation are optimized by employing the load-pull and source-pull contours for output power and collector efficiency. With the output power of more than 22 dBm and gain of 11 dB, HCBT shows a great potential for RF power amplifier design for modern wireless communication standards, such as Wi-Fi and 4G LTE.

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来源期刊

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

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