加载对CMOS锁存器亚稳参数的影响

C. Portmann, T. Meng
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引用次数: 4

摘要

我们已经从亚稳态性能的角度讨论了缓冲和非缓冲闩锁与加载的行为。描述了从非缓冲锁存器确定缓冲锁存器的T/sub 0/的公式。给出了缓冲和非缓冲锁存器的测量结果。这里显示的结果与标准单元或门阵列ASIC设计人员相关,他们通常使用库中包含的单元,并且对单元几乎没有控制,但对选择和加载有一定的控制。我们的结果表明,缓冲版本对所有大于1的fanout都是优越的;然而,MTBF性能仍然与负载呈指数相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Loading effects on metastable parameters of CMOS latches
We have discussed the behavior of buffered and unbuffered latches versus loading from a metastable performance viewpoint. A formula to determine T/sub 0/ for a buffered latch from an unbuffered one has been described. Measured results were presented for buffered and unbuffered latches. The results shown here are relevant to standard cell or gate array ASIC designers who generally use cells contained within a library and have little control over the cells, but some control over the selection and loading. Our results show the buffered version is superior for all fanouts greater than one; however, the MTBF performance is still exponentially related to loading.
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