利用mbe生长In/sub 0.5/Ga/sub 0.5/P刻蚀停止层的选择性栅极凹槽工艺，用于gaas基FET技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722668

A. Hanson, D. Danzilio, K. Bacher, L. Leung

{"title":"利用mbe生长In/sub 0.5/Ga/sub 0.5/P刻蚀停止层的选择性栅极凹槽工艺，用于gaas基FET技术","authors":"A. Hanson, D. Danzilio, K. Bacher, L. Leung","doi":"10.1109/GAAS.1998.722668","DOIUrl":null,"url":null,"abstract":"A selective recess process for GaAs-based FETs that utilizes etch-stop layers comprised of In/sub 0.5/Ga/sub 0.5/P is demonstrated. The material was grown by molecular beam epitaxy (MBE). This approach is shown to provide a suitable degree of selectivity over GaAs (150:1) for conventional recess chemistries. Additionally, insertion of a 20 /spl Aring/ stop-layer does not adversely effect the electrical performance of devices as previously reported approaches based on AlAs stop-layers have. Values of maximum open channel current (I/sub MAX/) transconductance (g/sub m/), pinchoff voltage (V/sub p/) and access resistance for devices containing In/sub 0.5/Ga/sub 0.5/P stop-layers compare well with nominal process values.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies\",\"authors\":\"A. Hanson, D. Danzilio, K. Bacher, L. Leung\",\"doi\":\"10.1109/GAAS.1998.722668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A selective recess process for GaAs-based FETs that utilizes etch-stop layers comprised of In/sub 0.5/Ga/sub 0.5/P is demonstrated. The material was grown by molecular beam epitaxy (MBE). This approach is shown to provide a suitable degree of selectivity over GaAs (150:1) for conventional recess chemistries. Additionally, insertion of a 20 /spl Aring/ stop-layer does not adversely effect the electrical performance of devices as previously reported approaches based on AlAs stop-layers have. Values of maximum open channel current (I/sub MAX/) transconductance (g/sub m/), pinchoff voltage (V/sub p/) and access resistance for devices containing In/sub 0.5/Ga/sub 0.5/P stop-layers compare well with nominal process values.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

演示了利用In/sub 0.5/Ga/sub 0.5/P组成的刻蚀停止层的gaas基fet的选择性凹槽工艺。该材料采用分子束外延(MBE)生长。这种方法被证明为传统凹槽化学提供了比砷化镓(150:1)合适的选择性程度。此外，插入20 /spl的Aring/ stop层不会像以前报道的基于AlAs stop层的方法那样对器件的电气性能产生不利影响。包含In/sub 0.5/Ga/sub 0.5/ p阻挡层的器件的最大开路电流(I/sub MAX/)跨导(g/sub m/)、针脚电压(V/sub p/)和接入电阻值与标称工艺值比较良好。

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A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies

A selective recess process for GaAs-based FETs that utilizes etch-stop layers comprised of In/sub 0.5/Ga/sub 0.5/P is demonstrated. The material was grown by molecular beam epitaxy (MBE). This approach is shown to provide a suitable degree of selectivity over GaAs (150:1) for conventional recess chemistries. Additionally, insertion of a 20 /spl Aring/ stop-layer does not adversely effect the electrical performance of devices as previously reported approaches based on AlAs stop-layers have. Values of maximum open channel current (I/sub MAX/) transconductance (g/sub m/), pinchoff voltage (V/sub p/) and access resistance for devices containing In/sub 0.5/Ga/sub 0.5/P stop-layers compare well with nominal process values.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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