M. Salah, S. Azizi, A. Boukhachem, C. Khaldi, J. Lamloumi
{"title":"光电探测器器件用掺杂氧化锌薄膜","authors":"M. Salah, S. Azizi, A. Boukhachem, C. Khaldi, J. Lamloumi","doi":"10.1109/SETIT.2016.7939901","DOIUrl":null,"url":null,"abstract":"In this work, structural, electrical properties of Li doped ZnO thin films, by chemical pulverization grown on glass substrates at different Li doping concentrations, were reported. Besides, The effects of lithium doping on structural properties of ZnO: Li thin films were studied by means of XRD technique. This study demonstrated that all prepared thin films consisted of unique phase ZnO and were well crystallized in wurtzite structure with the preferentially orientation (002) in the direction parallel to c-axis. The obtained results showed that these films have polycrystalline wurtzite-structure and high c-axis preferred orientation. Besides, the ZnO photodetectors revealed superior performance in the view of photocurrent.","PeriodicalId":426951,"journal":{"name":"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)","volume":"15 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Doped zinc oxide thin films for photodetectors devices\",\"authors\":\"M. Salah, S. Azizi, A. Boukhachem, C. Khaldi, J. Lamloumi\",\"doi\":\"10.1109/SETIT.2016.7939901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, structural, electrical properties of Li doped ZnO thin films, by chemical pulverization grown on glass substrates at different Li doping concentrations, were reported. Besides, The effects of lithium doping on structural properties of ZnO: Li thin films were studied by means of XRD technique. This study demonstrated that all prepared thin films consisted of unique phase ZnO and were well crystallized in wurtzite structure with the preferentially orientation (002) in the direction parallel to c-axis. The obtained results showed that these films have polycrystalline wurtzite-structure and high c-axis preferred orientation. Besides, the ZnO photodetectors revealed superior performance in the view of photocurrent.\",\"PeriodicalId\":426951,\"journal\":{\"name\":\"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)\",\"volume\":\"15 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SETIT.2016.7939901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SETIT.2016.7939901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Doped zinc oxide thin films for photodetectors devices
In this work, structural, electrical properties of Li doped ZnO thin films, by chemical pulverization grown on glass substrates at different Li doping concentrations, were reported. Besides, The effects of lithium doping on structural properties of ZnO: Li thin films were studied by means of XRD technique. This study demonstrated that all prepared thin films consisted of unique phase ZnO and were well crystallized in wurtzite structure with the preferentially orientation (002) in the direction parallel to c-axis. The obtained results showed that these films have polycrystalline wurtzite-structure and high c-axis preferred orientation. Besides, the ZnO photodetectors revealed superior performance in the view of photocurrent.