光电探测器器件用掺杂氧化锌薄膜

M. Salah, S. Azizi, A. Boukhachem, C. Khaldi, J. Lamloumi
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引用次数: 3

摘要

本文报道了在不同Li掺杂浓度的玻璃衬底上通过化学粉碎法制备的Li掺杂ZnO薄膜的结构和电学性能。此外,利用XRD技术研究了锂掺杂对ZnO: Li薄膜结构性能的影响。研究表明,所制备的薄膜均由独特的ZnO相组成,并具有平行于c轴方向的优先取向(002)的纤锌矿结构。结果表明,这些薄膜具有多晶纤锌矿结构和高c轴择优取向。此外,从光电流的角度来看,ZnO光电探测器表现出优异的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Doped zinc oxide thin films for photodetectors devices
In this work, structural, electrical properties of Li doped ZnO thin films, by chemical pulverization grown on glass substrates at different Li doping concentrations, were reported. Besides, The effects of lithium doping on structural properties of ZnO: Li thin films were studied by means of XRD technique. This study demonstrated that all prepared thin films consisted of unique phase ZnO and were well crystallized in wurtzite structure with the preferentially orientation (002) in the direction parallel to c-axis. The obtained results showed that these films have polycrystalline wurtzite-structure and high c-axis preferred orientation. Besides, the ZnO photodetectors revealed superior performance in the view of photocurrent.
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