低暗电流p-i-n (Al,Ga) n基太阳盲紫外探测器在横向外延生长的GaN上

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791613

G. Parish, S. Keller, P. Kozodoy, J. Ibbetson, H. Marchand, P. Fini, S. Fleischer, S. Denbaars, U. Mishra, E. Tarsa

{"title":"低暗电流p-i-n (Al,Ga) n基太阳盲紫外探测器在横向外延生长的GaN上","authors":"G. Parish, S. Keller, P. Kozodoy, J. Ibbetson, H. Marchand, P. Fini, S. Fleischer, S. Denbaars, U. Mishra, E. Tarsa","doi":"10.1109/COMMAD.1998.791613","DOIUrl":null,"url":null,"abstract":"Solar-blind ultraviolet photodiodes with a cutoff wavelength of 285 nm were fabricated on Laterally Epitaxially Overgrown (LEO) GaN grown by metalorganic chemical vapour deposition (MOCVD). Current-voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm/sup 2/ at -5 V. Spectral response measurements revealed peak responsivities of up to 0.05 A/W. For comparison, diodes were fabricated using the same p-i-n structure deposited on dislocated GaN. These diodes had dark current densities over seven orders of magnitude higher. In addition, whilst having comparable peak responsivities, the diodes on dislocated GaN had a less sharp cutoff.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN\",\"authors\":\"G. Parish, S. Keller, P. Kozodoy, J. Ibbetson, H. Marchand, P. Fini, S. Fleischer, S. Denbaars, U. Mishra, E. Tarsa\",\"doi\":\"10.1109/COMMAD.1998.791613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solar-blind ultraviolet photodiodes with a cutoff wavelength of 285 nm were fabricated on Laterally Epitaxially Overgrown (LEO) GaN grown by metalorganic chemical vapour deposition (MOCVD). Current-voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm/sup 2/ at -5 V. Spectral response measurements revealed peak responsivities of up to 0.05 A/W. For comparison, diodes were fabricated using the same p-i-n structure deposited on dislocated GaN. These diodes had dark current densities over seven orders of magnitude higher. In addition, whilst having comparable peak responsivities, the diodes on dislocated GaN had a less sharp cutoff.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791613\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在金属有机化学气相沉积法(MOCVD)生长的横向外延生长(LEO) GaN上制备了截止波长为285 nm的太阳盲紫外光电二极管。二极管的电流-电压测量显示，在-5 V时，暗电流密度低至10 nA/cm/sup 2/。光谱响应测量显示峰值响应高达0.05 A/W。为了比较，二极管是使用相同的p-i-n结构沉积在位错GaN上。这些二极管的暗电流密度要高出七个数量级以上。此外，虽然具有可比较的峰值响应，但位错氮化镓上的二极管具有不太尖锐的截止。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN

Solar-blind ultraviolet photodiodes with a cutoff wavelength of 285 nm were fabricated on Laterally Epitaxially Overgrown (LEO) GaN grown by metalorganic chemical vapour deposition (MOCVD). Current-voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm/sup 2/ at -5 V. Spectral response measurements revealed peak responsivities of up to 0.05 A/W. For comparison, diodes were fabricated using the same p-i-n structure deposited on dislocated GaN. These diodes had dark current densities over seven orders of magnitude higher. In addition, whilst having comparable peak responsivities, the diodes on dislocated GaN had a less sharp cutoff.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

自引率

0.00%

发文量