具有3.48 kV和0.95 mΩ-cm2的GaN-on-GaN p-n功率二极管:创纪录的12.8 GW/cm2的高品质系数

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409665

K. Nomoto, Z. Hu, B. Song, M. Zhu, M. Qi, R. Yan, V. Protasenko, E. Imhoff, J. Kuo, N. Kaneda, T. Mishima, T. Nakamura, D. Jena, H. Xing

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引用次数: 50

摘要

我们报道了独立GaN衬底上的GaN p-n二极管:在32 μm的漂移层和107 μm的二极管直径下，实现了创纪录的12.8 GW/cm2的Baliga品质系数(VB2/ Ron)， BV > 3.4 kV, Ron 2。泄漏电流密度低，在3kv时为10-3 - 10-4 A/cm2。理想因子在1.1-1.3之间达到创纪录的低水平，是高氮化镓质量的标志。这些都是报道得最好的GaN p-n二极管。

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GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

We report GaN p-n diodes on free-standing GaN substrates: a record high Baliga's figure-of-merit (V<;sub>B<;/sub><;sup>2<;/sup>/ Ron) of 12.8 GW/cm<;sup>2<;/sup> is achieved with a 32 μm drift layer and a diode diameter of 107 μm exhibiting a BV > 3.4 kV and a R<;sub>on<;/sub> <; 1 mΩ-cm<;sup>2<;/sup>. The leakage current density is low: 10<;sup>-3<;/sup> - 10<;sup>-4<;/sup> A/cm<;sup>2<;/sup> at 3 kV. A record low ideality factor of 1.1-1.3 is signature of high GaN quality. These are among the best-reported GaN p-n diodes.

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2015 IEEE International Electron Devices Meeting (IEDM)

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