探索复杂存取混合记忆体的时间和能量

J. Schmidt, H. Fröning, U. Brüning
{"title":"探索复杂存取混合记忆体的时间和能量","authors":"J. Schmidt, H. Fröning, U. Brüning","doi":"10.1145/2989081.2989099","DOIUrl":null,"url":null,"abstract":"Through-Silicon Vias (TSVs) and three-dimensional die stacking technologies are enabling a combination of DRAM and CMOS die layer within a single stack, leading to stacked memory. Functionality that was previously associated with the microprocessor, e.g. memory controllers, can now be integrated into the memory cube, allowing to packetize the interface for improved performance and reduced energy consumption per bit. Complex memory networks become feasible as the logic layer can include routing functionality. The massive amount of connectivity among the different die layers by the use of TSVs in combination with the packetized interface leads to a substantial improvement of memory access bandwidth. However, leveraging this vast bandwidth increase from an application point of view is not as simple as it seems. In this paper, we point out multiple pitfalls when accessing a stacked memory, namely the Hybrid Memory Cube (HMC) in combination with the publicly available openHMC host controller. HMCs internal architecture still has many similarities with traditional DRAM chips like the page-based access, but it is internally partitioned into multiple vaults. Each vault comprises a memory controller and multiple DRAM banks. Pages are rather small and rely on a closed-page policy. Also, the ratio of read and write operations has an optimum of which the application should be aware. The built-in support for atomic operations sounds like a great opportunity for off-loading, but the impact of contention cannot be neglected. Besides exploring such performance pitfalls, we further start exploring the energy efficiency of memory accesses to stacked memory.","PeriodicalId":283512,"journal":{"name":"Proceedings of the Second International Symposium on Memory Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Exploring Time and Energy for Complex Accesses to a Hybrid Memory Cube\",\"authors\":\"J. Schmidt, H. Fröning, U. Brüning\",\"doi\":\"10.1145/2989081.2989099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through-Silicon Vias (TSVs) and three-dimensional die stacking technologies are enabling a combination of DRAM and CMOS die layer within a single stack, leading to stacked memory. Functionality that was previously associated with the microprocessor, e.g. memory controllers, can now be integrated into the memory cube, allowing to packetize the interface for improved performance and reduced energy consumption per bit. Complex memory networks become feasible as the logic layer can include routing functionality. The massive amount of connectivity among the different die layers by the use of TSVs in combination with the packetized interface leads to a substantial improvement of memory access bandwidth. However, leveraging this vast bandwidth increase from an application point of view is not as simple as it seems. In this paper, we point out multiple pitfalls when accessing a stacked memory, namely the Hybrid Memory Cube (HMC) in combination with the publicly available openHMC host controller. HMCs internal architecture still has many similarities with traditional DRAM chips like the page-based access, but it is internally partitioned into multiple vaults. Each vault comprises a memory controller and multiple DRAM banks. Pages are rather small and rely on a closed-page policy. Also, the ratio of read and write operations has an optimum of which the application should be aware. The built-in support for atomic operations sounds like a great opportunity for off-loading, but the impact of contention cannot be neglected. Besides exploring such performance pitfalls, we further start exploring the energy efficiency of memory accesses to stacked memory.\",\"PeriodicalId\":283512,\"journal\":{\"name\":\"Proceedings of the Second International Symposium on Memory Systems\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Second International Symposium on Memory Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2989081.2989099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Second International Symposium on Memory Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2989081.2989099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

通过硅通孔(tsv)和三维芯片堆叠技术可以将DRAM和CMOS芯片层结合在一个堆栈中,从而实现堆叠存储器。以前与微处理器相关的功能,例如内存控制器,现在可以集成到内存立方体中,允许封装接口以提高性能并降低每比特的能耗。由于逻辑层可以包含路由功能,复杂的存储网络变得可行。通过使用tsv与封装接口相结合,不同晶片层之间的大量连接导致内存访问带宽的实质性改善。然而,从应用程序的角度来看,利用这种巨大的带宽增长并不像看起来那么简单。在本文中,我们指出了访问堆叠内存(即混合内存立方体(HMC)与公开可用的openenhmc主机控制器相结合)时的多个缺陷。hmc的内部架构仍然与传统的DRAM芯片有许多相似之处,比如基于页面的访问,但是它在内部被划分为多个vault。每个保险库包括一个存储器控制器和多个DRAM库。页面相当小,并且依赖于闭页策略。而且,读和写操作的比率有一个应用程序应该知道的最优值。对原子操作的内置支持听起来像是卸载的好机会,但是争用的影响也不容忽视。除了探索这些性能缺陷之外,我们还将进一步探索对堆叠内存的内存访问的能源效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring Time and Energy for Complex Accesses to a Hybrid Memory Cube
Through-Silicon Vias (TSVs) and three-dimensional die stacking technologies are enabling a combination of DRAM and CMOS die layer within a single stack, leading to stacked memory. Functionality that was previously associated with the microprocessor, e.g. memory controllers, can now be integrated into the memory cube, allowing to packetize the interface for improved performance and reduced energy consumption per bit. Complex memory networks become feasible as the logic layer can include routing functionality. The massive amount of connectivity among the different die layers by the use of TSVs in combination with the packetized interface leads to a substantial improvement of memory access bandwidth. However, leveraging this vast bandwidth increase from an application point of view is not as simple as it seems. In this paper, we point out multiple pitfalls when accessing a stacked memory, namely the Hybrid Memory Cube (HMC) in combination with the publicly available openHMC host controller. HMCs internal architecture still has many similarities with traditional DRAM chips like the page-based access, but it is internally partitioned into multiple vaults. Each vault comprises a memory controller and multiple DRAM banks. Pages are rather small and rely on a closed-page policy. Also, the ratio of read and write operations has an optimum of which the application should be aware. The built-in support for atomic operations sounds like a great opportunity for off-loading, but the impact of contention cannot be neglected. Besides exploring such performance pitfalls, we further start exploring the energy efficiency of memory accesses to stacked memory.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信