铜CMP模型:pH值为4的甘氨酸溶液中BTA的毫秒级吸附动力学

Seungchoun Choi, S. Tripathi, D. Dornfeld, F. Doyle
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引用次数: 29

摘要

研究了毫秒级苯并三唑(BTA)在含有0.01 M甘氨酸和0.01 M BTA的酸性水溶液中的吸附动力学。在pH为4的水溶液中,用计时电流法测量了含有0.01 M甘氨酸和不含0.01 M BTA的微铜电极表面的电流密度。在BTA存在的情况下,由于BTA的吸附,电流密度在几秒钟内以时间平方根的反比下降。在电位高于0.4 V的饱和甘汞电极上,由于铜表面形成Cu(I)BTA单层,电流在一秒左右后趋于平稳。在此基础上,建立并求解了BTA吸附初始动力学方程。分析表明,在这种浆料化学过程中,铜化学机械平化(CMP)过程中的物质去除主要是通过直接将铜溶解到水溶液中,而不是通过机械去除氧化或纯铜,并且垫片粗糙度与铜上给定位置之间的每次相互作用只去除该位置存在的一小部分Cu(I)BTA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Copper CMP Modeling: Millisecond Scale Adsorption Kinetics of BTA in Glycine-Containing Solutions at pH 4
Millisecond scale benzotriazole (BTA) adsorption kinetics in acidic aqueous solution containing 0.01 M glycine and 0.01 M BTA have been investigated. Chronoamperometry was used to measure current densities on the surface of a micro-copper electrode in pH 4 aqueous solutions containing 0.01 M glycine with or without 0.01 M BTA. In the presence of BTA the current density decreased as the inverse of the square root of time for a few seconds due to adsorption of BTA. At potentials above 0.4 V saturated calomel electrode the current leveled off after a second or so due to the formation of a Cu(I)BTA monolayer on the copper surface. Based on these data a governing equation was constructed and solved to determine the initial kinetics of BTA adsorption. Analysis shows that material removal during copper chemical mechanical planarization (CMP) in this slurry chemistry occurs mostly by direct dissolution of copper species into the aqueous solution rather than mechanical removal of oxidized or pure copper species and that each interaction between a pad asperity and a given site on the copper removes only a small fraction of the Cu(I)BTA species present at that site.
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