65纳米节点系统lsi光刻解决方案

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015450

T. Matsuo, M. Endo, S. Kishimura, A. Misaka, M. Sasago

{"title":"65纳米节点系统lsi光刻解决方案","authors":"T. Matsuo, M. Endo, S. Kishimura, A. Misaka, M. Sasago","doi":"10.1109/VLSIT.2002.1015450","DOIUrl":null,"url":null,"abstract":"For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lithography solution for 65-nm node system LSIs\",\"authors\":\"T. Matsuo, M. Endo, S. Kishimura, A. Misaka, M. Sasago\",\"doi\":\"10.1109/VLSIT.2002.1015450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015450\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对于65nm节点器件，我们系统地研究了电子束投影光刻(EPL)、ArF光刻和真空紫外(VUV)光刻的光刻裕度。其中EPL具有足够的余量和良好的图案保真度，实验证明它可以制作65nm节点器件图案。因此，EPL是65纳米节点光刻的有力候选。

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Lithography solution for 65-nm node system LSIs

For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern fidelity and our experiments have demonstrated that it can fabricate 65-nm node device patterns. Therefore, EPL is a strong candidate for 65-nm node lithography.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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