{"title":"2- 20ghz宽带低噪声AlGaAs HEMT MMIC放大器系列","authors":"R. Dixit, B. Nelson, W. Jones, J. Carillo","doi":"10.1109/MCS.1989.37253","DOIUrl":null,"url":null,"abstract":"The authors describe the technology development leading to a family of high-electron-mobility transistor (HEMT) monolithic low-noise amplifiers (LNAs), and present modeled and measured performance data on LNAs covering the 2-20 GHz frequency band. These amplifiers achieve noise figures comparable to their counterpart in hybrid HEMT technology. The amplifiers are configured in a cascadable design, with simultaneous low input and output VSWR, and flat gain response. Performance results include measured and modeled data for a 2-7 GHz LNA with 2.5-dB noise figure, a 2-20-GHz distributed amplifier with 9.5-dB flat gain and 3.5-dB noise figure, and a 5-11-GHz and >3.5 balanced LNA with 10-dB gain and <2.5-dB noise figure (6-11 GHz). A preliminary temperature step-stress reliability evaluation on the discrete-process HEMT device is also presented.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"A family of 2-20 GHz broadband low noise AlGaAs HEMT MMIC amplifiers\",\"authors\":\"R. Dixit, B. Nelson, W. Jones, J. Carillo\",\"doi\":\"10.1109/MCS.1989.37253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe the technology development leading to a family of high-electron-mobility transistor (HEMT) monolithic low-noise amplifiers (LNAs), and present modeled and measured performance data on LNAs covering the 2-20 GHz frequency band. These amplifiers achieve noise figures comparable to their counterpart in hybrid HEMT technology. The amplifiers are configured in a cascadable design, with simultaneous low input and output VSWR, and flat gain response. Performance results include measured and modeled data for a 2-7 GHz LNA with 2.5-dB noise figure, a 2-20-GHz distributed amplifier with 9.5-dB flat gain and 3.5-dB noise figure, and a 5-11-GHz and >3.5 balanced LNA with 10-dB gain and <2.5-dB noise figure (6-11 GHz). A preliminary temperature step-stress reliability evaluation on the discrete-process HEMT device is also presented.<<ETX>>\",\"PeriodicalId\":377911,\"journal\":{\"name\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1989.37253\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A family of 2-20 GHz broadband low noise AlGaAs HEMT MMIC amplifiers
The authors describe the technology development leading to a family of high-electron-mobility transistor (HEMT) monolithic low-noise amplifiers (LNAs), and present modeled and measured performance data on LNAs covering the 2-20 GHz frequency band. These amplifiers achieve noise figures comparable to their counterpart in hybrid HEMT technology. The amplifiers are configured in a cascadable design, with simultaneous low input and output VSWR, and flat gain response. Performance results include measured and modeled data for a 2-7 GHz LNA with 2.5-dB noise figure, a 2-20-GHz distributed amplifier with 9.5-dB flat gain and 3.5-dB noise figure, and a 5-11-GHz and >3.5 balanced LNA with 10-dB gain and <2.5-dB noise figure (6-11 GHz). A preliminary temperature step-stress reliability evaluation on the discrete-process HEMT device is also presented.<>
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