晶圆键合硅光子学

D. Liang, A. Fang, Hui-wen Chen, J. Bowers
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引用次数: 0

摘要

直到最近微电子工业难以维持摩尔定律之前,化合物半导体-硅集成从未有过如此大的需求。最近,我们开发了一种混合硅倏逝平台(HSEP),该平台可以实现III-V和硅的不相容特性的相干结合,即III-V端具有直接带隙和高迁移率,硅端具有成熟的CMOS可制造性和低光损耗。包括激光器、放大器、光电探测器和调制器在内的一系列关键组件已在该平台上成功实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer bonded silicon photonics
Compound semiconductors-silicon integration has never been of such great demand until the recent difficulty to maintain Moore's law in the microelectronics industry. Recently, we have developed a hybrid silicon evanescent platform (HSEP), which enables the coherent marriage of incompatible characteristics of III-V and silicon, i.e., direct bandgap and high mobility at III-V side and mature CMOS manufacturability and low-optical loss at silicon side. A series of critical components including lasers, amplifiers, photodetectors, and modulators have been successfully implemented in this platform.
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