脉冲激光沉积羟基磷灰石薄膜在铂或钛基底上的压电性能测量

Tsutomu Nishigaki, H. Nishikawa, M. Kusunoki, S. Hontsu
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引用次数: 6

摘要

为了测量羟基磷灰石(HAp)薄膜的压电性能,我们制作了Cu/HAp/Ti或Cu/HAp/Pt结构。首先,使用KrF脉冲激光沉积(PLD)方法在Ti或Pt衬底上沉积1.5 m厚的HAp。HAp沉积后,在氮气气氛中后退火结晶,并在电炉中缓慢冷却。然后,在HAp薄膜上附着Cu顶部电极片。最后,将Cu/HAp/Ti或Cu/HAp/Pt结构的一端夹紧组成振动悬臂梁。当Cu/HAp/Ti或Cu/HAp/Pt束流被微型激振器以束流的第一固有频率激励时,通过运算放大电路测量HAp薄膜的输出电压响应来估计压电系数。结果表明,人工合成的HAp薄膜具有压电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of Piezoelectric Properties of Pulsed Laser Deposited Hydroxyapatite Thin Films on Platinum or Titanium Substrate
In order to measure the piezoelectric properties of the Hydroxyapatite (HAp) films, we have fabricated Cu/HAp/Ti or Cu/HAp/Pt structure. At first, a 1.5 m thick HAp was deposited on a Ti or Pt substrate using the KrF Pulsed Laser Deposition (PLD) method. After the HAp deposition, the HAp film was crystallized by post-annealing in nitrogen gas atmosphere and cooled slowly in an electric furnace. Then, a Cu top electrode sheet was attached on HAp film. Finally, one end of the Cu/HAp/Ti or Cu/HAp/Pt structure was clamped to compose a vibrating cantilever beam. Piezoelectric coefficients were estimated by output voltage responses of HAp films measured by a operational amplifier circuit when the Cu/HAp/Ti or Cu/HAp/Pt beam was excited by a mini-shaker at the first natural frequency of the beam. The results showed the piezoelectricity of the artificially synthesized HAp films.
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