T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich
{"title":"InP DHBT技术中的超宽带低噪声分布式放大器","authors":"T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich","doi":"10.23919/eumc.2018.8541515","DOIUrl":null,"url":null,"abstract":"This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology\",\"authors\":\"T. Shivan, M. Hossain, D. Stoppel, N. Weimann, S. Schulz, R. Doerner, V. Krozer, W. Heinrich\",\"doi\":\"10.23919/eumc.2018.8541515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2018.8541515\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2018.8541515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an fT/Fmax of ~ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 … 185 GHz with a noise figure of 8 dB in the frequency range 75 … 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
