{"title":"增量δ - σ调制器与自制造电容器的多电池组","authors":"Q. Duan, T. Guo, S. Huang, Min Ding","doi":"10.1109/ICAM.2017.8242147","DOIUrl":null,"url":null,"abstract":"An incremental delta-sigma modulator with a self-making capacitor having a high voltage operating ability for a 12-cell battery pack is proposed in this paper. The measured voltage range for each battery is from 0 to 5 V, and the maximum input voltage reaches to 60 V. The self-making capacitor adopting a metal over poly silicon with a relatively thin layer of oxide between the two plates is generated. The incremental delta-sigma modulator adopting a second-order CIFB structure is implemented in a 0.25-μm 5 V CMOS process with drain extended MOS high-voltage devices. The modulator consuming a current of approximately 400 μA and with a sampling frequency of 500 kHz completes converting one cell voltage in 790 μs. The schematic and layout simulation results show the modulator with a digital filter achieves a resolution of 12 bits and good linearity.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An incremental delta-sigma modulator with self-making capacitors for multi-cell battery packs\",\"authors\":\"Q. Duan, T. Guo, S. Huang, Min Ding\",\"doi\":\"10.1109/ICAM.2017.8242147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An incremental delta-sigma modulator with a self-making capacitor having a high voltage operating ability for a 12-cell battery pack is proposed in this paper. The measured voltage range for each battery is from 0 to 5 V, and the maximum input voltage reaches to 60 V. The self-making capacitor adopting a metal over poly silicon with a relatively thin layer of oxide between the two plates is generated. The incremental delta-sigma modulator adopting a second-order CIFB structure is implemented in a 0.25-μm 5 V CMOS process with drain extended MOS high-voltage devices. The modulator consuming a current of approximately 400 μA and with a sampling frequency of 500 kHz completes converting one cell voltage in 790 μs. The schematic and layout simulation results show the modulator with a digital filter achieves a resolution of 12 bits and good linearity.\",\"PeriodicalId\":117801,\"journal\":{\"name\":\"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAM.2017.8242147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An incremental delta-sigma modulator with self-making capacitors for multi-cell battery packs
An incremental delta-sigma modulator with a self-making capacitor having a high voltage operating ability for a 12-cell battery pack is proposed in this paper. The measured voltage range for each battery is from 0 to 5 V, and the maximum input voltage reaches to 60 V. The self-making capacitor adopting a metal over poly silicon with a relatively thin layer of oxide between the two plates is generated. The incremental delta-sigma modulator adopting a second-order CIFB structure is implemented in a 0.25-μm 5 V CMOS process with drain extended MOS high-voltage devices. The modulator consuming a current of approximately 400 μA and with a sampling frequency of 500 kHz completes converting one cell voltage in 790 μs. The schematic and layout simulation results show the modulator with a digital filter achieves a resolution of 12 bits and good linearity.