独立n-GaN衬底上AlGaN/GaN hemt的垂直器件操作

2007 Power Conversion Conference - Nagoya Pub Date : 2007-04-02 DOI:10.1109/PCCON.2007.372994

M. Sugimoto, H. Ueda, M. Kanechika, N. Soejima, T. Uesugi, T. Kachi

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引用次数: 16

摘要

我们报道了常闭和常开垂直AlGaN/GaN高电子迁移率晶体管(HEMTs)的演示。正常关断的设备显示阈值电压为1.6 V。正常导通器件的归一化导通电阻为1.48 ω -cm2，最大漏极电流密度为3.9 kA/cm2。在此之前，实验研究了AlGaN/n-GaN/p-GaN结构中阈值电压对n-GaN厚度的依赖关系。

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Vertical device operation of AlGaN/GaN HEMTs on free-standing n-GaN substrates

We report on the demonstration of normally off and normally on vertical AlGaN/GaN high electron mobility transistors (HEMTs). The normally off device shows the threshold voltage of 1.6 V. The normally on device shows the normalized on resistance of 1.48 mOmega-cm2 and the maximum drain current density of 3.9 kA/cm2. Before then, the dependence of threshold voltage on the thickness of n-GaN in the structure of AlGaN/n-GaN/p-GaN was studied experimentally.

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2007 Power Conversion Conference - Nagoya

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