基于0.18µm数字CMOS工艺的6位220毫秒/秒时间交错SAR ADC

Chun-Cheng Liu, Yi-Ting Huang, Guan-Ying Huang, Soon-Jyh Chang, Chung-Ming Huang, Chih-Haur Huang
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引用次数: 19

摘要

本文报道了一种用于低功耗低成本CMOS集成系统的6位220 ms /s时间交错逐次逼近寄存器模数转换器(SAR ADC)。设计的主要概念是基于在DAC电容阵列中提出的设置和关闭电容开关方法。与传统的开关方式相比,平均开关能量降低约81%。在220-MS/s采样速率下,测得的SNDR和SFDR分别为32.62 dB和48.96 dB。所得ENOB为5.13位。总功耗为6.8 mW。采用台积电0.18-µm 1P5M数字CMOS技术制造,ADC的有效面积仅为0.032 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 6-bit 220-MS/s time-interleaving SAR ADC in 0.18-µm digital CMOS process
This paper reports a 6-bit 220-MS/s time-interleaving successive approximation register analog-to-digital converter (SAR ADC) for low-power low-cost CMOS integrated systems. The major concept of the design is based on the proposed set-and-down capacitor switching method in the DAC capacitor array. Compared to the conventional switching method, the average switching energy is reduced about 81%. At 220-MS/s sampling rate, the measured SNDR and SFDR are 32.62 dB and 48.96 dB respectively. The resultant ENOB is 5.13 bits. The total power consumption is 6.8 mW. Fabricated in TSMC 0.18-µm 1P5M Digital CMOS technology, the ADC only occupies 0.032 mm2 active area.
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