基于0.15μm GaN/SiC技术的30-56.5 GHz阻性单端混频器设计

2020 4th Australian Microwave Symposium (AMS) Pub Date : 2020-02-01 DOI:10.1109/AMS48904.2020.9059412

Nethini T. Weerathunge, S. Chakraborty, S. Mahon, Benny Wu, M. Heimlich

{"title":"基于0.15μm GaN/SiC技术的30-56.5 GHz阻性单端混频器设计","authors":"Nethini T. Weerathunge, S. Chakraborty, S. Mahon, Benny Wu, M. Heimlich","doi":"10.1109/AMS48904.2020.9059412","DOIUrl":null,"url":null,"abstract":"A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of 30-56.5 GHz Resistive Single-Ended Mixer in 0.15μm GaN/SiC Technology\",\"authors\":\"Nethini T. Weerathunge, S. Chakraborty, S. Mahon, Benny Wu, M. Heimlich\",\"doi\":\"10.1109/AMS48904.2020.9059412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.\",\"PeriodicalId\":257699,\"journal\":{\"name\":\"2020 4th Australian Microwave Symposium (AMS)\",\"volume\":\"203 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 4th Australian Microwave Symposium (AMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AMS48904.2020.9059412\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 4th Australian Microwave Symposium (AMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AMS48904.2020.9059412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了一种基于WIN半导体最新发布的0.15μm GaN/SiC HEMT工艺实现的30 GHz至56.5 GHz宽带阻性混频器。在最佳输入本端功率为12 dBm时，混合器在中频处的转换损耗为10 dB。低中频和射频中频的隔离度分别大于49 dB和34 dB。混频器的输入1dB压缩点为18dbm。包括焊盘在内的芯片尺寸为1 mm2，电路的有效面积仅为0.29 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of 30-56.5 GHz Resistive Single-Ended Mixer in 0.15μm GaN/SiC Technology

A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 4th Australian Microwave Symposium (AMS)

自引率

0.00%

发文量