{"title":"用于先进半导体加工的微波加热","authors":"J. Booske","doi":"10.1109/ISDRS.2003.1272185","DOIUrl":null,"url":null,"abstract":"The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Microwave heating for advanced semiconductor processing\",\"authors\":\"J. Booske\",\"doi\":\"10.1109/ISDRS.2003.1272185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272185\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave heating for advanced semiconductor processing
The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.
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