新的介电常数，由于杂质尺寸效应，并由有效的玻尔模型确定，强烈影响金属-绝缘体跃迁中的莫特准则和简并(Si, GaAs, InP)半导体的光学带隙

{"title":"新的介电常数，由于杂质尺寸效应，并由有效的玻尔模型确定，强烈影响金属-绝缘体跃迁中的莫特准则和简并(Si, GaAs, InP)半导体的光学带隙","authors":"H. van Cong","doi":"10.54647/physics14498","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":194720,"journal":{"name":"SCIREA Journal of Physics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"New dielectric constant, due to the impurity size effect, and determined by an effective Bohr model, affecting strongly the Mott criterion in the metal-insulator transition and the optical band gap in degenerate (Si, GaAs, InP)-semiconductors\",\"authors\":\"H. van Cong\",\"doi\":\"10.54647/physics14498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":194720,\"journal\":{\"name\":\"SCIREA Journal of Physics\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SCIREA Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.54647/physics14498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SCIREA Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54647/physics14498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}