6 GHz GaN HEMT线性功率放大器

2021 3rd International Conference on Signal Processing and Communication (ICPSC) Pub Date : 2021-05-13 DOI:10.1109/ICSPC51351.2021.9451754

Hamza. K Husna, D. Nirmal, S. Merlin Gilbert Raj, J. Ajayan, L. Arivazhagan, A. S. Augustine Fletcher

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引用次数: 0

摘要

本文介绍了工作在6ghz频率下的GaN HEMT线性功率放大器的设计与分析。栅极长度为800 nm的GaN HEMT在6 GHz频率下进行功率匹配。利用散射参数数据建立了GaN HEMT的线性模型，用于功率放大器的设计。在6ghz频率下，功率放大器的功率增益为9db，噪声系数为2db。该线性功率放大器在6 GHz频率下的罗氏稳定系数为1.4，因此该放大器是稳定的。得到了氮化镓HEMT功率放大器的散射参数。在6 GHz频率下，功率放大器的输入回波损耗为-19 dB。

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6 GHz GaN HEMT Linear Power Amplifier

The design and analysis of GaN HEMT linear power amplifier to operate at 6 GHz frequency is presented in this work. The GaN HEMT with 800 nm gate length, was power matched at the frequency of 6 GHz. The linear model of the GaN HEMT was derived from the scattering parameter data for designing the power amplifier. The power amplifier displayed a power gain of 9 dB and noise figure of 2 dB at 6 GHz frequency. The Rollet’s Stability factor of the linear power amplifier at 6 GHz frequency is 1.4, hence the amplifier is stable. The scattering parameters of the GaN HEMT power amplifier were also obtained. At 6 GHz frequency the power amplifier exhibited an input return loss of -19 dB.

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2021 3rd International Conference on Signal Processing and Communication (ICPSC)

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