多层拓扑中的微带准椭圆低通滤波器

Ananya Parameswaran, S. Raghavan
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引用次数: 0

摘要

本文提出了一种基于改进介质的准椭圆阶跃阻抗低通滤波器。电介质采用镀孔过孔进行修饰,并采用双层拓扑结构实现。人造介电体的间距为0.22λg,高度为其他介电体的三倍,以获得准椭圆特性。该方法在慢波巴特沃斯滤波器的阻带边缘产生了传输零,衰减为78 dB,比已有的同类研究成果要高。为了验证概念,制作了滤波器并通过测量验证了其性能。仿真结果与实测结果吻合良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstrip Quasi-Elliptic Low Pass Filter in Multilayer Topology
A quasi-elliptic stepped impedance low pass filter using modified dielectric is proposed in this work. The dielectric is modified using plated hole vias and is implemented with double layer topology. The pitch should be 0.22λg and the height of the artificial dielectric should be three times the other dielectric to result in quasi-elliptic characteristics. The presented technique resulted in transmission zero at the stop band edge of slow wave Butterworth filter with 78 dB attenuation and is higher compared to similar works reported. For proof of concept, the filter is fabricated and performance is validated with measurement. The simulated and measured results showed good mutual agreement with each other.
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