Dave Saunders, S. Bingham, G. Menon, D. Crockett, Josh Tor, R. mende, M. Behrens, N. Jain, A. Alexanian, Rajanish
{"title":"用于低成本FMCW机载雷达的单片24ghz SiGe BiCMOS收发器","authors":"Dave Saunders, S. Bingham, G. Menon, D. Crockett, Josh Tor, R. mende, M. Behrens, N. Jain, A. Alexanian, Rajanish","doi":"10.1109/NAECON.2009.5426619","DOIUrl":null,"url":null,"abstract":"The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7dBm output power and −82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from −40 to +125°C at 3.5V, 275 mA. Fabricated using Jazz Semiconductor's 0.18 µm SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.","PeriodicalId":305765,"journal":{"name":"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A single-chip 24 GHz SiGe BiCMOS transceiver for low cost FMCW airborne radars\",\"authors\":\"Dave Saunders, S. Bingham, G. Menon, D. Crockett, Josh Tor, R. mende, M. Behrens, N. Jain, A. Alexanian, Rajanish\",\"doi\":\"10.1109/NAECON.2009.5426619\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7dBm output power and −82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from −40 to +125°C at 3.5V, 275 mA. Fabricated using Jazz Semiconductor's 0.18 µm SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.\",\"PeriodicalId\":305765,\"journal\":{\"name\":\"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2009.5426619\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2009.5426619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
介绍了一种高集成度FMCW雷达收发器的设计和测试结果。收发器包括一个具有+7dBm输出功率和- 82 dBc/Hz相位噪声的发射器,在100 kHz时具有10dB NF和18 dB增益的双I/Q接收器,锁相环,15位DAC,仪表放大器,LDO稳压器和串行编程接口-所有设计工作范围为- 40至+125°C,电压为3.5V, 275 mA。该RFIC采用Jazz半导体的0.18 μ m SiGe BiCMOS工艺制造,封装在32引脚5 mm × 5 mm QFN中,具有作者所知的24 GHz最高集成度。
A single-chip 24 GHz SiGe BiCMOS transceiver for low cost FMCW airborne radars
The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7dBm output power and −82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from −40 to +125°C at 3.5V, 275 mA. Fabricated using Jazz Semiconductor's 0.18 µm SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.