{"title":"s二极管与光学控制","authors":"M. Skakunov, I. Prudaev, A.A. Bachnaruk","doi":"10.1109/SIBCON.2009.5044850","DOIUrl":null,"url":null,"abstract":"New optoelectronic switching device was developed. Avalanche GaAs-diode and light-emitting diode are integrated in the single crystal. It is present maim static characteristics of the devise.","PeriodicalId":164545,"journal":{"name":"2009 International Siberian Conference on Control and Communications","volume":"13 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"S-diode with optical control\",\"authors\":\"M. Skakunov, I. Prudaev, A.A. Bachnaruk\",\"doi\":\"10.1109/SIBCON.2009.5044850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New optoelectronic switching device was developed. Avalanche GaAs-diode and light-emitting diode are integrated in the single crystal. It is present maim static characteristics of the devise.\",\"PeriodicalId\":164545,\"journal\":{\"name\":\"2009 International Siberian Conference on Control and Communications\",\"volume\":\"13 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2009.5044850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2009.5044850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New optoelectronic switching device was developed. Avalanche GaAs-diode and light-emitting diode are integrated in the single crystal. It is present maim static characteristics of the devise.
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