溅射沉积硅化钨薄膜的电学性能

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI:10.1109/SMELEC.2010.5549498

Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou

{"title":"溅射沉积硅化钨薄膜的电学性能","authors":"Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou","doi":"10.1109/SMELEC.2010.5549498","DOIUrl":null,"url":null,"abstract":"This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical properties of sputtered deposited tungsten silicide films\",\"authors\":\"Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou\",\"doi\":\"10.1109/SMELEC.2010.5549498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.\",\"PeriodicalId\":308501,\"journal\":{\"name\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2010.5549498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了衬底温度和沉积压力对直流等离子体磁控溅射沉积硅化钨(WSi)薄膜电学性能的影响。实验结果表明，衬底温度和沉积压力对WSi薄膜的电学性能有显著影响。在高沉积压力和高衬底温度下，WSi薄膜的电学性能较差。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical properties of sputtered deposited tungsten silicide films

This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)

自引率

0.00%

发文量