控制单元间不完全连接的功率双极开关的动态电流定位

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI:10.1109/EDM.2011.6006914

D. V. Gusin, A. V. Gorbatyuk, I. Grekhov

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引用次数: 0

摘要

本文的目的是分析具有不完全耦合基元的类晶闸管双极器件在栅极关断瞬态时动态电流定位所造成的安全工作区域限制。以外接mos控制集成晶闸管为例，通过数值模拟研究了串联栅极电阻对开关特性的影响。发现不同单元栅极电阻的不平等会导致危险的电流定位和随后的关断操作失败。确定了电流定位开始的定量阈值，并对所研究设备的不同可能关断模式进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dynamic current localization in power bipolar switches with imperfect interconnections of controlled cells

The objective of this paper is to analyze the safe operating area limitation caused by dynamic current localization at the gate turn-off transient of thyristor-like bipolar devices with imperfectly coupled elementary cells. The impact of series gate resistance on switching characteristics is studied by numerical simulation for the typical case of integrated thyristor with external MOS-control. The inequality of gate resistances for different cells is found to cause dangerous current localization and subsequent failure at the turn-off operation. Quantitative thresholds for the onset of current localization are determined and compared for different possible turn-off modes of the device under study.

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2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings

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