采用蒸发和退火工艺制备ZrO/sub 2/和ZrO/sub 2//Y/sub 2/O/sub 3/栅极电介质

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088524

M. Johansson, M. Yousif, A. Sareen, P. Lundgren, S. Bengtsson, U. Sodervall

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引用次数: 0

摘要

本文报道了采用电子束蒸发Zr或钇稳定氧化锆(YSZ)制备ZrO/sub / gate介质的MOS电容器的电学特性，并进行了热处理。用这种方法制备了等效氧化物厚度(EOT)为1.9 nm，相对介电常数约为15的电介质。研究了退火对Zr掺入Si衬底的影响。SIMS分析表明，当温度高达900/spl°C时，衬底中没有Zr扩散的迹象，只有在1100/spl°C时，介电层才有明显的扩散。

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ZrO/sub 2/ and ZrO/sub 2//Y/sub 2/O/sub 3/ gate dielectrics prepared by evaporation and annealing processes

The electrical characteristics of MOS capacitors with ZrO/sub 2/ gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900/spl deg/C and that significant diffusion from the dielectric layer occur only at 1100/spl deg/C.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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