L. Pattison, A. Greer, D. Linton, A. Patterson, J. Leckey
{"title":"大功率晶体管的矢量校正谐波测量","authors":"L. Pattison, A. Greer, D. Linton, A. Patterson, J. Leckey","doi":"10.1109/ARFTG.1998.327274","DOIUrl":null,"url":null,"abstract":"A large signal measurement system for characterisation of high power packaged devices has been developed. The system is based upon the Microwave Transition Analyser (HP 78002) integrated with a novel test jig which has been developed `in-house¿. The measurement system is fully vector corrected to the device planes and allows measurement of the magnitude and phase of the output harmonics under different drive levels, dc bias conditions, fundamental load impedance and frequency. Measured results are shown for a 4W Bipolar device.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Vector Corrected Harmonic Measurement of High Power Transistors\",\"authors\":\"L. Pattison, A. Greer, D. Linton, A. Patterson, J. Leckey\",\"doi\":\"10.1109/ARFTG.1998.327274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A large signal measurement system for characterisation of high power packaged devices has been developed. The system is based upon the Microwave Transition Analyser (HP 78002) integrated with a novel test jig which has been developed `in-house¿. The measurement system is fully vector corrected to the device planes and allows measurement of the magnitude and phase of the output harmonics under different drive levels, dc bias conditions, fundamental load impedance and frequency. Measured results are shown for a 4W Bipolar device.\",\"PeriodicalId\":208002,\"journal\":{\"name\":\"51st ARFTG Conference Digest\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1998.327274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1998.327274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vector Corrected Harmonic Measurement of High Power Transistors
A large signal measurement system for characterisation of high power packaged devices has been developed. The system is based upon the Microwave Transition Analyser (HP 78002) integrated with a novel test jig which has been developed `in-house¿. The measurement system is fully vector corrected to the device planes and allows measurement of the magnitude and phase of the output harmonics under different drive levels, dc bias conditions, fundamental load impedance and frequency. Measured results are shown for a 4W Bipolar device.
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