光电用GaN开关同步升压MPPT变换器的仿真

P. Suskis
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引用次数: 1

摘要

经典升压拓扑是光伏(PV)最大功率点跟踪(MPPT)转换器的一个很好的选择,因为它在输入上具有小的电流纹波。效率是影响太阳能系统总收益时间的关键参数。由于硅基开关的经典变换器的能量效率受到当今技术的限制,因此选择了氮化镓开关。本文包括简要介绍和市场调研,以确定设计的初步任务。文中给出了升压MPPT变换器样机的仿真结果。所有用于模型的元素都是由制造商提供的设备模型。在研究过程中,得到了期望效率曲线。为了更好地选择FET,设计了不同GaN开关类型的模型。该模型将在未来的研究中与实际样机进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of synchronous boost MPPT converter with GaN switches for photovoltaics
The classic boost topology is a good choice for photovoltaics (PV) Maximum Power Point Tracking (MPPT) converters as it has small current ripple on the input. The efficiency is key parameter for PV-sources as it significantly influences solar system total payoff time. As the energy efficiency for classic converters with silicon-based switches is limited by today technology the GaN switches are chosen. The paper contains brief introduction and market research to set the initial tasks for design. The paper contains simulation results on prototype of boost MPPT converter. All the elements being used for model are device models provided by manufacturers. During the research expected efficiency curves are obtained. Design have been modeled with different GaN switch types for better FET choice. The model will be compared to the real prototype in future research.
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